（e）當(dāng)用365nm紫外燈照射時(shí)，打造光敏PMAMC連接的AuNPs的UV-vis光譜。氫谷（b）以β-CD-g-[P4VP-b-PAA-b-PEO]?為納米反應(yīng)器制備的Fe3O4/Au核/殼NPs的TEM圖像。（f）在365nm紫外線燈照射3小時(shí)后，白城北方隨后暴露于254nm紫外線燈下的PMAMC連接的AuNPs的UV-vis光譜。

圖22.用于癌癥治療的雙功能β-CD-g-[PCL-b-PAEMA-b-PPEGMA]21/AuNPs/DOX納米載體的示意圖【小結(jié)】在這篇綜述中，模式謀劃作者討論了利用兩類非線性BCPs作為納米反應(yīng)器來(lái)合成NCs的最新進(jìn)展。升級(jí)（c,d）PNIPAM連接的AuNPs在大量線性PNIPAM鏈存在下對(duì)4-硝基苯酚的催化還原反應(yīng)的開(kāi)/關(guān)催化活性和相應(yīng)的表觀動(dòng)力學(xué)速率常數(shù)的Arrhenius圖。

打造圖10.CsPbBr3?NPs的制備與表征（a）通過(guò)利用兩親性星型兩嵌段β-CD-g-[PAA-b-PS]共聚物作為納米反應(yīng)器來(lái)制備PS連接的CsPbBr3?NPs的示意圖。

氫谷（c）PL峰位置與NPs大小的關(guān)系。白城北方（圖3）圖3?典型堿金屬離子嵌入機(jī)制。

TEM驗(yàn)證了CoNi-HCF表面約15nm左右的NiHCF包覆層，模式謀劃該包覆層有效降低充放電循環(huán)過(guò)程中的晶格紊亂，并抑制副反應(yīng)，因此獲得優(yōu)異的循環(huán)穩(wěn)定性。升級(jí)（a）Zn2+在CoHCF框架結(jié)構(gòu)中可逆嵌入/脫出。

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